Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens
Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens
复制标题
与光束聚焦透镜集成的硅场发射器阵列的制造
DOI：
10.1143/jjap.35.6626
复制
发表时间：
1996
影响因子：
1.5
通讯作者：
Junji Itoh Junji Itoh
中科院分区：
文献类型：
--
作者：
Y. Yamaoka;Seigo Kanemaru Seigo Kanemaru;Junji Itoh Junji Itoh
制作了一种能够产生聚焦电子束(FEB)的新型场发射极结构。本结构基本上类似于双栅极结构，然而，两个栅极开口以与共焦面内透镜结构相同的方式布置。内栅作为一个直径为0.6微米的出射门，外栅作为一个直径为2.4微米的静电聚焦透镜。当两个栅加70V的偏置电压时，场发射特性得到了70nA/针尖的束流。对束流聚焦特性也进行了评估，在不明显降低束流的情况下，通过降低聚焦透镜电压可以实现束流聚焦。
A new field emitter structure capable of generating a focused electron beam (FEB) was fabricated. The present structure is basically similar to a double-gated structure, however, the two gate openings are arranged in the same way as a confocal in-plane lens structure. The inner gate acts as an extraction gate with a 0.6-µm-diameter opening and the outer one acts as an electrostatic focusing lens with a 2.4-µm-diameter opening. The field emission characteristics were evaluated and a beam current of 70 nA/tip was obtained when a bias voltage of 70 V was applied to the two gates. The beam focusing characteristics were also evaluated and the beam could be focused by decreasing the focusing lens voltage without a significant decrease in the beam current.