Carrier-based compact modeling of charge and capacitance of long channel undoped symmetric double-gate MOSFETs
Carrier-based compact modeling of charge and capacitance of long channel undoped symmetric double-gate MOSFETs
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DOI：
10.1088/0268-1242/23/4/045003
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发表时间：
2008-02
影响因子：
1.9
通讯作者：
Jin He;W. Bian;Yu Chen;Bo Li;Y. Tao;Yiqun Wei
中科院分区：
文献类型：
--
作者：
Jin He;W. Bian;Yu Chen;Bo Li;Y. Tao;Yiqun Wei
Carrier-based compact modeling of terminal charges and intrinsic trans-capacitances of a long channel undoped symmetric double-gate MOSFET is presented in this paper. The explicit expressions for the terminal charges are obtained from a simplified carrier-based drain current model and the current continuity principle. Then analytic trans-capacitances are derived in terms of the charges at the source and drain ends. The validity of the analytic terminal charges and trans-capacitances is also verified by 2D numerical analysis proving the accuracy of the compact model presented here.
