Gas Flow at the Ultra-nanoscale: Universal Predictive Model and Validation in Nanochannels of Ångstrom-Level Resolution.
Gas Flow at the Ultra-nanoscale: Universal Predictive Model and Validation in Nanochannels of Ångstrom-Level Resolution.
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DOI:
10.1021/acsami.8b11455
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发表时间:
2018-09-26
影响因子:
9.5
通讯作者:
Grattoni A
中科院分区:
文献类型:
--
作者:
Scorrano G;Bruno G;Di Trani N;Ferrari M;Pimpinelli A;Grattoni A
Gas transport across nanoscale pores is determinant in molecular exchange in living organisms as well as in a broad spectrum of technologies. Here we report an unprecedented theoretical and experimental analysis of gas transport in a consistent set of confining nanochannels ranging in size from the ultra-nano- to the sub-microscale. A generally applicable theoretical approach quantitatively predicting confined gas flow in the Knudsen and transition regime was developed. Unlike current theories, specifically designed for very simple channel geometries, our approach can be applied to virtually all geometries, for which the probability distribution of path lengths for particle-interface collisions can be computed, either analytically or by numerical simulations. To generate a much needed benchmark experimental model, we manufactured extremely reproducible membranes with two-dimensional nanochannels. Channel sizes ranged from 2.5 to 250 nm, and Å-level of size control and interface tolerances were achieved using leading-edge nanofabrication techniques. We then measured gas flow in the Knudsen number range from 0.2 to 20. Excellent agreement between theoretical predictions and experimental data was found, demonstrating the validity and potential of our approach.
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影响因子:
6.1
作者:
Fine, Daniel;Grattoni, Alessandro;Liu, Xuewu
通讯作者:
Liu, Xuewu
影响因子:
7.4
作者:
Grattoni, Alessandro;Gill, Jaskaran;Ferrari, Mauro
通讯作者:
Ferrari, Mauro
影响因子:
10
作者:
Ferrati, Silvia;Nicolov, Eugenia;Grattoni, Alessandro
通讯作者:
Grattoni, Alessandro
影响因子:
4.9
作者:
Filgueira, C. S.;Nicolov, E.;Grattoni, A.
通讯作者:
Grattoni, A.
影响因子:
10.8
作者:
Cooper, SM;Cruden, BA;Roy, S
通讯作者:
Roy, S