Fabrication of Eu1Ba2Cu3O7-δ+BaHfO3 coated conductors with 141 A/cm-w under 3 T at 77 K using the IBAD/PLD process
Fabrication of Eu1Ba2Cu3O7-δ+BaHfO3 coated conductors with 141 A/cm-w under 3 T at 77 K using the IBAD/PLD process
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DOI：
10.1016/j.physc.2014.03.013
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发表时间：
2014-09-15
影响因子：
1.7
通讯作者：
Shiohara, Y.
中科院分区：
文献类型：
--
作者：
Yoshida, T.;Ibi, A.;Shiohara, Y.
引入人工钉扎中心如BaZrO 3（BZO）、BaSnO 3（BSO）、BaHfO 3（BHO）纳米棒可有效提高场临界电流（I-c）。特别地，已经发现BHO掺杂到Gd 1Ba 2Cu 3 O 7-δ中在宽的温度和磁场范围下表现出高的内场I-c。此外，通过BHO掺杂，成功地制备了具有高内场特性和高均匀性的长涂层导体（CC）。然而，随着超导膜厚度增加到3 μ m以上，I-c值的增加表现出某种饱和的方式。在这项工作中，一个新的组合Eu 1Ba 2Cu 3 O 7-delta（EuBCO）+ BHO系统进行了研究，使用IBAD/PLD工艺，以提高现场性能，特别是在厚膜。结果发现，厚度为3.6 μ m的EuBCO + BHO膜显示出在77 K、3 T下测量的141 A/cm·w的极高性能。这种高的现场I-C值被初步解释为由于抑制a轴取向的晶粒，即使在厚膜。成功地制备了200 m长的EuBCO + BHO CC和93.7 m长的CC，在77 K，3 T下测得的电流密度为55.5 A/cm·w和108 A/cm·w。(c)2014爱思唯尔有限公司版权所有。
Introduction of artificial pinning centers such as BaZrO3 (BZO), BaSnO3 (BSO), BaHfO3 (BHO) nano-rods is effective to improve in-field critical currents (I-c). In particular, the BHO doping into Gd1Ba2Cu3O7-delta had been found to exhibit high in-field I-c under wide ranges of temperatures and magnetic fields. Furthermore, a long coated conductor (CC) with high in-field properties and high uniformity was successfully fabricated by means of BHO doping. However, increase of the I-c values exhibited somewhat in a saturated manner with thickening the superconducting films above 3 mu m. In this work, a new combination of Eu1Ba2Cu3O7-delta (EuBCO) + BHO system was investigated using the IBAD/PLD process to improve in-field performance especially in thick films. As a result, it was found that a EuBCO + BHO film with 3.6 mu m in thickness showed extremely high property of 141 A/cm-w measured at 77K, 3 T. This high in-field I-c value was tentatively explained due to suppression of a-axis oriented grains even in thick films. A 200 m long EuBCO + BHO CC with 55.5 A/cm-w and a 93.7 m long CC with 108 A/cm-w measured at 77K, 3T were successfully fabricated. (c) 2014 Elsevier B.V. All rights reserved.