Silicon photodiodes with integrated thin-film filters for selective bandpasses in the extreme ultraviolet
Silicon photodiodes with integrated thin-film filters for selective bandpasses in the extreme ultraviolet
复制标题
具有集成薄膜滤波器的硅光电二极管，用于极紫外区域的选择性带通
DOI：
10.1117/12.186628
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
R. Korde
中科院分区：
文献类型：
--
作者：
L. Canfield;R. Vest;T. Woods;R. Korde
硅光电二极管在极紫外光（EUV）下工作令人满意，在过去几年中已经商业化。这些光电二极管也固有地响应从x射线区域延伸到近红外的辐射，这在许多EUV应用中是不希望的。在这种光电二极管的表面添加一层合适的过滤材料薄膜，可以实现将硅的灵敏度限制在极紫外中更窄的一个或多个波段。这导致一个坚固，但敏感的光度计的应用，其中主要的带外辐射存在。应用包括等离子体诊断、太阳物理、x射线光刻、x射线显微镜和材料科学。以前生产这种器件的尝试导致了分流电阻的降低，背景噪声也相应增加。原型探测器现在已经使用铝、铝/碳、铝/碳/钪、银、锡和钛直接沉积的薄膜制造，而没有降低未涂覆的光电二极管的噪声特性。给出了测量和理论灵敏度数据，并讨论了降低这种过滤探测器的x射线响应的相对简单的方法。
Silicon photodiodes which operate satisfactorily in the extreme ultraviolet (EUV) have been commercially available for the past few years. These photodiodes also inherently respond to radiation extending from the x-ray region to the near infrared, a property which is undesirable in many EUV applications. The addition of a thin film of a suitable filtering material to the surface of such a photodiode can accomplish the restriction of the sensitivity of the silicon to a much narrower band, or bands, in the EUV. This results in a rugged, yet sensitive photometer for applications in which dominant out-of-band radiation is present. Applications include plasma diagnostics, solar physics, x-ray lithography, x-ray microscopy, and materials science. Previous attempts to produce such devices have resulted in degraded shunt resistance with a corresponding increase in background noise. Prototype detectors have now been fabricated using directly deposited films of aluminum, aluminum/carbon, aluminum/carbon/scandium, silver, tin, and titanium, without degradation of the noise characteristics of the uncoated photodiodes. Measured and theoretical sensitivity data are presented, as well as a discussion of relatively simple methods to reduce the x-ray response of such filtered detectors.