Evidence for the leading role of the stacking-fault triangle in the Si(111) 1 x 1-->7 x 7 phase transition.
Evidence for the leading role of the stacking-fault triangle in the Si(111) 1 x 1-->7 x 7 phase transition.
复制标题
堆垛层错三角形在 Si(111) 1 x 1-->7 x 7 相变中起主导作用的证据。
DOI：
10.1103/physrevb.51.14594
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Ohdomari
中科院分区：
文献类型：
--
作者：
Hoshino;Kumamoto;Kokubun;Ishimaru;Ohdomari
在高达 600 C 的温度下进行的原位扫描隧道显微镜 (STM) 观察提供了原子尺度的证据，证明堆垛层错 (SF) 半单元的形成在过冷时从 1× 1 相生长出 Si (111) 表面的 7× 7 重构域中起着主导作用。 SF主导作用的概念解释了这样的事实：Si(111)过冷表面上的所有7×7重构区域形成顶点指向<1 1 2>方向的三角形域。 STM数据表明SF半单位的形成涉及二聚体链和角孔的构建。 SF 半单元的类似主导作用也被推断为 5×5 或 9×9 亚稳态结构生长的基础。
In situ scanning-tunneling-microscopy (STM) observations at temperatures up to 600 C provide atomic-scale evidence, demonstrating that the formation of the stacking-fault (SF) half-unit plays the leading role in the growth of 7× 7 reconstructed domains of Si (111) surfaces from the 1× 1 phase upon supercooling. The concept of the SF leading role accounts for the fact that all of the 7× 7 reconstructed areas on Si (111) supercooled surfaces form triangular domains with vertices pointing in< 1 1 2> directions. The STM data suggest that the formation of the SF half-unit involves the construction of dimer chains and corner holes. A similar leading role of the SF half-unit is also deduced to be fundamental for the growth of 5× 5 or 9× 9 metastable structures.