Co(N, O)-based granular thin films and their soft magnetic properties
Co(N, O)-based granular thin films and their soft magnetic properties
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DOI：
10.1016/0925-8388(94)04911-4
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发表时间：
1995-05
影响因子：
6.2
通讯作者：
S. Ohnuma;H. Fujimori;S. Furukawa;S. Mitani;T. Masumoto
中科院分区：
文献类型：
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作者：
S. Ohnuma;H. Fujimori;S. Furukawa;S. Mitani;T. Masumoto
研究了用射频磁控溅射法制备的Co_（Si，Al）_（N，O）薄膜的电阻率、磁性能和结构。研究了采用（Ar+ O2或N2）气体的反应磁控溅射。透射电子显微镜观察表明，薄膜由小于10 nm的晶粒组成。在晶粒和晶粒间区域之间观察到相当数量的成分偏差。薄膜的电阻率随溅射气体中O2或N2气体流量比的增加而增加，这归因于晶粒间区域的氮化或氧化。电阻率达到103-107μΩ·cm。电阻率小于104μΩ cm的薄膜具有软磁性能。氮化膜表现出特别好的磁导率频率响应。损耗项很小，即使在高频区域，并且与由Landau-Lifshitz方程计算的损耗项近似一致。
The electrical resistivity, magnetic properties and structure of Co(Si, Al)(N, O) films, prepared by r.f. reactive magnetron sputtering with (Ar+O2or N2) gases, have been studied. Transmission electron microscopy observation reveals that the films are composed of grains finer than 10 nm. A considerable amount of compositional deviation is observed between the grain and intergrain regions. The electrical resistivity of the films increases on increasing the O2or N2gas flow ratio in the sputtering gas, which is attributed to the nitriding or oxidizing of the intergrain region. The resistivity reaches anomalously high values 103–107μΩ cm. The films with resistivity less than about 104μΩ cm exhibit soft magnetic properties. Nitrided films exhibit a particularly good frequency response of their permeability. The loss terms are small, even in the high frequency region, and are approximately consistent with those calculated by the Landau-Lifshitz equation.