All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates
All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates
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DOI：
10.1109/ted.2015.2493361
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发表时间：
2015-11
影响因子：
3.1
通讯作者：
F. J. Klupfel;A. Holtz;F. Schein;H. von Wenckstern;M. Grundmann
中科院分区：
文献类型：
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作者：
F. J. Klupfel;A. Holtz;F. Schein;H. von Wenckstern;M. Grundmann
我们提出了一种基于结型场效应管(JFET)的集成逆变器电路，该管具有氧化锌沟道和非晶态锌钴氧化物栅接触点。在工作电压为3V时，逆变器的增益值高达276，不确定度范围低至0.3V。从理论上讲，增益的大小可以追溯到JFET饱和电流的斜率。演示了电平移位器的使用，以获得可集成到逻辑电路中的全反相器。
We present integrated inverter circuits based on junction FETs (JFETs) with ZnO channels and amorphous ZnCo2O4 gate contacts. The inverters reach high gain values up to 276 and uncertainty ranges down to 0.3 V for an operating voltage of 3 V. The magnitude of the gain is traced back theoretically to the slope of the JFET saturation current. The use of a level shifter is demonstrated, in order to obtain full inverters, which can be integrated into logic circuits.