Synthesis and Luminescent Properties of GdNbO4:RE3+ (RE = Tm, Dy) Nanocrystalline Phosphors via the Sol-Gel Process
Synthesis and Luminescent Properties of GdNbO4:RE3+ (RE = Tm, Dy) Nanocrystalline Phosphors via the Sol-Gel Process
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溶胶-凝胶法合成 GdNbO4:RE3 (RE = Tm, Dy) 纳米晶荧光粉及其发光性能
DOI：
10.1021/jp4086415
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发表时间：
2013-10-24
影响因子：
3.7
通讯作者：
Lin, Jun
中科院分区：
文献类型：
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作者：
Lu, Ying;Tang, Xinghua;Lin, Jun
通过 Pechini 型溶胶凝胶工艺制备了纳米晶 GdNbO4:Tm3+ 和 GdNbO4:Dy3+ 荧光粉。利用 X 射线衍射、场发射扫描电子显微镜、透射电子显微镜、光致发光和阴极发光 (CL) 光谱来表征合成的荧光粉。 XRD 显示样品在 900 ℃ 时开始结晶，在 1000 ℃ 时可获得纯 GdNbO4 相。FE-SEM 图像表明 GdNbO4:Tm3+ 和 GdNbO4:Dy3+ 样品由尺寸约为 30-50 nm 的细小球形晶粒组成。在紫外光（264 nm）和低压电子束（1-3 kV）的激发下，GdNbO4:Tm3+和GdNbO4:Dy3+荧光粉表现出Tm3+（D-1(2) -> H-3(6)、H-3(5)、H-3(4)和(1)G(4) -> H-3(6)跃迁的特征发射）和 Dy3+（F-4(9/2) -> H-6(15/2) 和 F-4(9/2) -> H-6(13/2) 跃迁），分别。 GdNbO4:Tm3+荧光粉的蓝色CL具有更高的色纯度和与Y2SiO5:Ce3+商业产品相当的强度。 GdNbO4:Dy3+ 荧光粉实现了响应近紫外和低压电子束激发而发射单一成分白光。所得GdNbO4:Tm3+和GdNbO4:Dy3+荧光粉在近紫外白光发光二极管和场发射显示器件领域具有潜在的应用前景。
Nanocrystalline GdNbO4:Tm3+ and GdNbO4:Dy3+ phosphors were prepared through a Pechini-type sol gel process. X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. XRD reveals that the samples begin to crystallize at 900 degrees C and the pure GdNbO4 phase can be obtained at 1000 degrees C. FE-SEM images indicate that the GdNbO4:Tm3+ and GdNbO4:Dy3+ samples consist of fine and spherical grains with a size around 30-50 nm. Under the excitation of UV light (264 nm) and low-voltage electron beams (1-3 kV), the GdNbO4:Tm3+ and GdNbO4:Dy3+ phosphors showed the characteristic emissions of Tm3+ (D-1(2) -> H-3(6), H-3(5), H-3(4), and (1)G(4) -> H-3(6) transitions) and Dy3+ (F-4(9/2) -> H-6(15/2) and F-4(9/2) -> H-6(13/2) transitions), respectively. The blue CL of the GdNbO4:Tm3+ phosphor has higher color purity and comparable intensity to the Y2SiO5:Ce3+ commercial product. A single-composition white light emitting in response to near UV and low-voltage electron beam excitation has been realized in GdNbO4:Dy3+ phosphor. The obtained GdNbO4:Tm3+ and GdNbO4:Dy3+ phosphors have potential applications in the areas of near UV white-light-emitting diodes and field emission display devices.