New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
复制标题
用于超导集成电路的使用光敏聚酰亚胺绝缘层的约瑟夫森隧道结的新制造工艺
DOI：
10.1109/tasc.2003.813660
复制
发表时间：
2003
影响因子：
1.8
通讯作者：
M. Aoyagi
中科院分区：
文献类型：
--
作者：
K. Kikuchi;S. Segawa;E. Jung;H. Nakagawa;K. Tokoro;H. Itatani;M. Aoyagi
通过嵌段共聚法合成的光敏聚酰亚胺有望成为未来LSI电路中一种优良的绝缘层。这种聚酰亚胺比其他有机聚合物具有更高的耐热性。它还具有良好的电性能，如高击穿电压和低介电常数。我们提出了一种利用光敏聚酰亚胺制造约瑟夫森隧道结的新工艺。这有可能简化约瑟夫森隧道结的制造过程，因为光敏聚酰亚胺被用作绝缘层，而不是传统的无机绝缘膜，而不需要蚀刻过程。我们利用这种新工艺制备了Nb/Al-AlOx/Nb Josephson隧道结。该结具有优异的电流-电压特性，其V/sub /值大于80 mV。
Photosensitive polyimide, synthesized by block copolymerization, is expected to be an excellent insulation layer in LSI circuits in the future. This polyimide has a higher thermal resistance than those of the other organic polymers. It also has good electric properties such as a high break down voltage and a low dielectric constant. We propose a new fabrication process for the Josephson tunnel junction using a photosensitive polyimide. It is possible to simplify the fabrication process of the Josephson tunnel junction, because the photosensitive polyimide is used as the insulation layer instead of conventional inorganic insulation films without an etching process. We fabricated Nb/Al-AlOx/Nb Josephson tunnel junctions using this new process. The junctions show excellent current-voltage (I-V) characteristics with V/sub m/ values more than 80 mV.