Memristors and Bernoulli dynamics
Memristors and Bernoulli dynamics
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DOI：
10.1109/cnna.2010.5430324
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发表时间：
2010-03
期刊：
影响因子：
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通讯作者：
E. Drakakis;S. Yaliraki;Mauricio Barahona
中科院分区：
文献类型：
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作者：
E. Drakakis;S. Yaliraki;Mauricio Barahona
本文介绍了一种新的适用于研究忆阻器的理论框架。框架的铰接依赖于某种类型的动力学的识别，这种动力学符合伯努利微分方程，因此被称为伯努利动力学。本文解释了伯努利动力学如何：a)控制理想威廉姆斯忆阻器和其他忆阻元件的动态行为，以及b)如何利用它们来推导和后续研究形式Imres = f（Vmres）或Vmres = g（Imres）的解析表达式，这些表达式定义了忆阻器电流（Imres）和忆阻器电压（Imres）之间的关系。
This paper introduces a novel theoretical framework suitable for the study of memristors. The articulation of the framework relies upon the identification of a certain type of dynamics which comply with Bernoulli's differential equation and are thus termed Bernoulli dynamics. The paper explains how the Bernoulli dynamics: a) govern the dynamic behaviour of the ideal Williams memristors and other memelements, and b) how they can be exploited for the derivation and subsequent study of analytic expressions of the form Imres = f(Vmres) or Vmres = g(Imres) which define the relation between the memristor current Imres and the memristor voltage Vmres Implications of the adoption of the new theoretical framework for future memristor-based circuit research are also discussed.