The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications
The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications
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两步封闭空间升华法在硅衬底上生长AgGaTe2层及其在太阳能电池制造中的应用
DOI：
10.1109/pvsc.2016.7749649
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and M. Kobayashi
中科院分区：
文献类型：
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作者：
A. Uruno;and M. Kobayashi
通过消除熔背腐蚀，采用两种不同的工艺在Ag2Te/Si结构上形成aggate2层。使用Ag2Te和ga2te3源混合物形成AgGaTe2时，生长过程中都发生了ga2te3源材料向Ag2Te层的扩散和AgGaTe2层的形成。在Ag2Te/Si结构上沉积和退火ga2te3层也可以形成aggate2。利用p-AgGaTe2/n-Si异质结制备了太阳能电池，其转换效率约为3%。
The AgGaTe2layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3source material into the Ag2Te layer and formation of the AgGaTe2layer were both occurring during the growth when Ag2Te and Ga2Te3source mixture was used to form AgGaTe2. It was also clear the AgGaTe2could be formed by deposition and annealing of Ga2Te3layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.