Resonant tunneling anisotropic magnetoresistance induced by magnetic proximity
Resonant tunneling anisotropic magnetoresistance induced by magnetic proximity
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DOI：
10.1103/physrevb.102.045312
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发表时间：
2020-04
影响因子：
3.7
通讯作者：
Chenghao Shen;T. Leeney;A. Matos-Abiague;B. Scharf;Jong E. Han;I. Žutić
中科院分区：
文献类型：
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作者：
Chenghao Shen;T. Leeney;A. Matos-Abiague;B. Scharf;Jong E. Han;I. Žutić
我们揭示了二维电子气中Rashba自旋-轨道耦合和邻近感应磁化之间的相互作用导致了特殊的输运性质和大的磁电阻各向异性。虽然相关的隧道各向异性磁阻(TAMR)已经被广泛地研究过了，但我们预测了一种不同起源的效应，该效应是由于共振条件随磁化强度的面内旋转而演变而产生的，并且具有更大的幅度。隧穿中的共振来自散射态的自旋-宇称-时间对称性。然而，这种对称性通常不存在于系统本身，并且仅在某些参数值中出现。在近似化的三维拓扑绝缘子(TI)的拓扑表面状态中没有共振行为，TAMR测量可以很容易地将它们与许多TI固有的、经常被误解的琐碎的Rashba类状态区分开来。
We reveal that the interplay between Rashba spin-orbit coupling and proximity-induced magnetization in a two-dimensional electron gas leads to peculiar transport properties and large anisotropy of magnetoresistance. While the related tunneling anisotropic magnetoresistance (TAMR) has been extensively studied before, we predict an effect with a different origin arising from the evolution of a resonant condition with the in-plane rotation of magnetization and having a much larger magnitude. The resonances in the tunneling emerge from a spin-parity-time symmetry of the scattering states. However, such a symmetry is generally absent from the system itself and only appears for certain parameter values. Without resonant behavior in the topological surface states of a proximitized three-dimensional topological insulator (TI), TAMR measurements can readily distinguish them from often misinterpreted trivial Rashba-like states inherent to many TIs.