10 Gbit/s Semi-Insulating Buried Heterostructure Loss-less Reflective Amplified Modulator for Wavelength Agnostic Networks

10 Gbit/s Semi-Insulating Buried Heterostructure Loss-less Reflective Amplified Modulator for Wavelength Agnostic Networks
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DOI：
10.1109/ofc.2008.4528436
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发表时间：
2008-02
期刊：
OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference
影响因子：
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通讯作者：
N. Dupuis;A. Garreau;C. Jany;J. Decobert;F. Alexandre;R. Brenot;J. Landreau;N. Lagay;F. Martin;D. Carpentier;C. Kazmierski
N. Dupuis;A. Garreau;C. Jany;J. Decobert;F. Alexandre;R. Brenot;J. Landreau;N. Lagay;F. Martin;D. Carpentier;C. Kazmierski
中科院分区：
其他
文献类型：
--
作者：
N. Dupuis;A. Garreau;C. Jany;J. Decobert;F. Alexandre;R. Brenot;J. Landreau;N. Lagay;F. Martin;D. Carpentier;C. Kazmierski

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我们采用半绝缘埋地异质结构和选择性面积生长集成了AlGalnAs调制器放大器。反射元件具有插入增益，在80nm范围内以10Gbit/s的速度工作，并可在高达60°C的温度下连接双向10km SMF。
We integrated an AlGalnAs modulator-amplifier using semi-insulating buried hetrostructure and selective area growth. The reflective component exhibits insertion gain, operates at 10Gbit/s over 80nm and links bi-directional 10km SMF up to 60°C.