Applications of Gallium Nitride in power electronics
Applications of Gallium Nitride in power electronics
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DOI：
10.1109/peci.2013.6506025
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发表时间：
2013-04
期刊：
影响因子：
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通讯作者：
M. Scott;Jinzhu Li;Jin Wang
中科院分区：
文献类型：
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作者：
M. Scott;Jinzhu Li;Jin Wang
氮化镓（GaN）的电气特性提供了优于硅（Si）的几个优点，用于制造电力电子设备的开关器件。这种新兴技术已经在某些应用中显示出功率密度和效率的改善。下面的文章回顾了GaN器件的最新技术水平。它讨论了实施中的挑战，例如米勒电容上的dV/dt导致的误触发。它检查第三象限操作的负栅极到源极电压。提供了用于安装来自高效功率转换的器件的策略。最后给出了两种开关电容电路的实验结果。第一个是工作在893 kHz的倍压器，峰值功率为480 W，效率为94.4%。第二个是三相三电平逆变器，初步测试结果运行在300 kHz。
The electrical properties of Gallium Nitride (GaN) offer several advantages over Silicon (Si) for creating switching devices for power electronics. Already this emerging technology is showing improvements in power density and efficiency in certain applications. The following paper reviews the current state of the art of GaN devices. It discusses challenges in implementation, such as the mistriggers that result from dV/dt's across the miller capacitance. It examines third quadrant operation for negative gate to source voltages. A strategy for mounting devices from Efficient Power Conversion is provided. Finally, two switched capacitor circuits are presented with experimental results. The first is a voltage doubler operating at 893 kHz with a peak power of 480 W and an efficiency of 94.4 %. The second is a three-phase, three-level inverter with preliminary test results operating at 300 kHz.