On-chip Hybrid Superconducting-Semiconducting Quantum Circuit
On-chip Hybrid Superconducting-Semiconducting Quantum Circuit
复制标题
DOI：
10.1109/tasc.2018.2812817
复制
发表时间：
2018-06-01
影响因子：
1.8
通讯作者：
Smith, Charles G.
中科院分区：
文献类型：
--
作者：
Delfanazari, Kaveh;Puddy, Reuben K.;Smith, Charles G.
本文实验研究了由8个平面和弹道Nb-In_（0. 75）Ga_（0. 25）As-Nb约瑟夫森结组成的超导-半导体混合电路。采用电子束光刻技术在InGaAs芯片上制作了约瑟夫森结。与我们以前的研究相比，通过光刻法制造的长结，在这项研究中，我们观察到在In0.75Ga0.25 As量子阱在较高的温度下，T = 0.3和1 K（He-3低温恒温器温度范围）之间的诱导超导性。在最低基温T = 300 mK时，测得了δ（ind）= 0.65 meV的感应超导带隙。讨论了温度和磁场B对感生超导电性的影响。我们的研究结果表明，我们的In0.75Ga0.25 As异质结构是一个有前途的可扩展的量子处理和计算应用的材料系统。
In this paper, we experimentally demonstrate a hybrid superconducting-semiconducting circuit consisting of eight planar and ballistic Nb-In0.75Ga0.25As-Nb Josephson junctions. E-beam lithography was used to fabricate the Josephson junctions on an InGaAs chip. In contrast to our previous studies on long junctions that were fabricated by photolithography, in this study, we observe the induced superconductivity in an In0.75Ga0.25 As quantum well at higher temperatures, between T = 0.3 and 1 K (He-3 cryostat temperature range). The induced superconducting gap of Delta(ind) = 0.65 meV was measured at lowest base temperature T = 300 mK. The effect of temperature and magnetic fields B on the induced superconductivity are presented. Our results suggest that our In0.75Ga0.25 As heterostructure is a promising scalable material system for quantum processing and computing applications.