Effect of RF Sputtering Power and Deposition Time on Optical and Electrical Properties of Indium Tin Oxide Thin Film
Effect of RF Sputtering Power and Deposition Time on Optical and Electrical Properties of Indium Tin Oxide Thin Film
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DOI：
10.1155/2021/5556305
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发表时间：
2021-08-30
影响因子：
--
通讯作者：
Ech-Chamikh, Elmaati
中科院分区：
文献类型：
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作者：
Tchenka, Abdelaziz;Agdad, Abdelali;Ech-Chamikh, Elmaati
氧化铟锡（ITO）薄膜因其在可见光区域具有高导电性和良好的光学透明度而被广泛用作太阳能电池、气体传感器和车窗中的透明导电电极。在这项工作中，使用含有 90% In2O3 和 10% SnO2 的 ITO 靶材，通过阴极射频 (RF) 溅射制备了 ITO 薄膜。通过X射线衍射（XRD）、扫描电子显微镜（SEM）和X射线反射计（XRR）研究了结构特性。通过应用四点法并研究霍尔效应来进行电气测量。最后，通过紫外-可见-近红外分光光度法测定光学性质。研究了射频功率和沉积时间对光学和电学性能的影响。结果表明，通过使用 110-80 W 的射频功率，可以制备具有低电阻率的晶体样品，这是 TCO 半导体的目标特性。电测量表明，电阻率通过增加射频功率和/或沉积时间而降低。
Indium tin oxide (ITO) films are widely used as transparent conducting electrodes in solar cells, gas sensors, and car windows because of their high electrical conductivity and good optical transparency in the visible region. In this work, ITO thin films were prepared by cathodic radio-frequency (RF) sputtering using an ITO target with 90% In2O3 and 10% SnO2. The structural properties were studied by X-ray diffraction (XRD), scanning electronic microscopy (SEM), and X-ray reflectometry (XRR). Electrical measurements were performed by applying the four-point method and studying the Hall Effect. Finally, optical properties were taken by the UV-Vis-NIR spectrophotometry. The effect of the RF power and deposition time on optical and electrical properties was investigated. It is shown that by using a RF power of 110-80 W, one can prepare crystalline samples with low resistivity, which is an aimed property for TCO semiconductors. Electrical measurements revealed that the resistivity decreases by increasing the RF power and/or the deposition time.