X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
复制标题
DOI：
10.1103/physrevb.72.045423
复制
发表时间：
2005-07-01
影响因子：
3.7
通讯作者：
Ploog, KH
中科院分区：
文献类型：
--
作者：
Kaganer, VM;Brandt, O;Ploog, KH
我们分析了具有大密度随机分布螺纹位错的氮化镓外延层的x射线衍射线形。峰只在峰的中心，最强烈的部分是高斯分布，而尾部服从幂律。在开检波器的摇摆曲线中观察到随机位错典型的q（-3）衰减。整个剖面被限制的随机位错分布很好地拟合。得到了边缘位错和螺纹位错的密度以及位错相关的范围。
We analyze the line shape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The q(-3) decay typical for random dislocations is observed in the rocking curves with open detector. The entire profile is well fitted by a restricted random dislocation distribution. The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained.