CdHgTe-CMOS hybrid focal plane arrays: a flexible solution for advanced infrared systems
CdHgTe-CMOS hybrid focal plane arrays: a flexible solution for advanced infrared systems
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DOI：
10.1117/12.188683
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发表时间：
1994-10
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影响因子：
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通讯作者：
I. Baker;G. Crimes;J. E. Parsons;E. O'Keefe
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文献类型：
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作者：
I. Baker;G. Crimes;J. E. Parsons;E. O'Keefe
本文描述了一种通用焦平面技术，该技术已被开发用于英国和欧洲的一系列第二代红外系统应用。这些应用需要二维和长线性阵列，光谱灵敏度从2.5到12.5微米。红外传感器技术是基于富碲、液相外延（LPE）工艺和侧向收集光电二极管阵列生长的CdHgTe材料。CdHgTe阵列安装在定制的CMOS集成电路上，提供系统所需的多路复用和信号处理功能。描述了为多路复用后产生最高性能的LPE生长工艺和混合制造工艺所选择的技术方向，并讨论了该技术的一些性能限制。介绍了一种焦平面类型1024元长线性阵列的可生产性、环境稳定性和典型的辐射性能。最近，更密集的CMOS工艺的可用性使得一些特殊技术得以开发，用于先进的红外搜索和跟踪以及高性能成像应用。这些应用需要尽可能高的性能，并且需要特殊功能，例如：通过延迟和集成（TDI）增强信噪比，冗余缺陷元件去选（DED），大量元件和低图像串扰。概述了长波长线性阵列所选择的技术路线，并描述了具有多达12个TDI元素的原型器件，用户可定义DED，像素尺寸为30微米平方。
This paper describes a generic focal plane technology which has been developed to serve a range of second generation infrared system applications in the UK and Europe. These applications call for both two-dimensional and long linear arrays, and spectral sensitivities from 2.5 to 12.5 micrometers . The infrared sensor technology is based on CdHgTe material grown by the tellurium rich, liquid phase epitaxy (LPE) process and lateral collection photodiode arrays. The CdHgTe arrays are mounted on custom designed CMOS integrated circuits which provide the multiplexing and signal processing functions required by the system. The technical directions chosen for the LPE growth process and the hybrid fabrication process to produce the highest performance after multiplexing are described, along with a discussion of some of the performance limits for this technology. The producibility, environmental stability and typical radiometric performance are presented with respect to one focal plane type, a 1024 element long linear array. Recently, the availability of denser CMOS processes has enabled some special techniques to be developed for advanced infrared search- and-track and high performance imaging applications. Such applications require the highest possible performance, and call for special functions such as: signal-to-noise enhancement by time-delay and integration (TDI), defective element deselection (DED) for redundancy, large numbers of elements, and low image crosstalk. The technical routes chosen for long wavelength, long linear arrays are outlined, and prototype devices with up to 12 elements in TDI, user-definable DED, and a pixel size of 30 micrometers square are described.