Ferromagnetic nano-conductive filament formed in Ni/TiO2/Pt resistive-switching memory
Ferromagnetic nano-conductive filament formed in Ni/TiO2/Pt resistive-switching memory
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DOI：
10.1007/s00339-014-8769-5
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发表时间：
2015-02
期刊：
影响因子：
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通讯作者：
S. Otsuka;Yoshifumi Hamada;Tomohiro Shimizu;S. Shingubara
中科院分区：
文献类型：
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作者：
S. Otsuka;Yoshifumi Hamada;Tomohiro Shimizu;S. Shingubara
在连续切换随机存取存储器的氧化物层中形成的导电丝（CF）是由氧空位还是金属原子构成的问题。利用电阻温度系数（TCR）、各向异性磁电阻（AMR）和横截面透射电子显微镜能量色散X射线分析（TEM-EDX）研究了Ni/TiO 2/Pt器件的CF。通过TCR测量，器件的低阻态（LRS）显示出金属特性。此外，LRS中的器械显示AMR，这是形成铁磁性CF的直接证据。横截面的TEM-EDX观察表明，纳米尺寸的Ni沉淀存在于导电点附近的区域。结果表明，Ni原子从相邻的Ni电极迁移到TiO 2层，形成了纳米级的铁磁性碳纤维.
There is a question whether the conductive filament (CF) formed in the oxide layer of a resistive-switching random access memory is made of oxygen vacancies or metallic atoms. We investigated the CF of Ni/TiO2/Pt device using temperature coefficient of resistance (TCR), anisotropic magnetoresistance (AMR), and cross-sectional transmission electron microscopy with energy dispersive X-ray analysis (TEM-EDX). The low resistance state (LRS) of the device showed metallic property by TCR measurement. Furthermore, the device in the LRS showed AMR, which was a direct evidence of the formation of ferromagnetic CF. The cross-sectional TEM-EDX observation revealed that a nano-sized Ni precipitation existed in the area nearby a conductive spot. It is intensively suggested that Ni atoms migrated from the adjacent Ni electrode to TiO2layer to form the nano-sized ferromagnetic CF.