Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers
Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers
复制标题
量子点激光器的载波噪声增强相对强度噪声
DOI：
10.1109/jqe.2018.2880452
复制
发表时间：
2018-12-01
影响因子：
2.5
通讯作者：
Grillot, Frederic
中科院分区：
文献类型：
--
作者：
Duan, Jianan;Wang, Xing-Guang;Grillot, Frederic
This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low-intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low-noise quantum dot oscillators for high-speed communications, optical frequency combs, and radar applications.
