Metallization for crossbar molecular devices
Metallization for crossbar molecular devices
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DOI：
10.1088/0957-4484/18/15/155202
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发表时间：
2007-03
期刊：
影响因子：
3.5
通讯作者：
J. Deng;W. Hofbauer;N. Chandrasekhar;S. O’Shea
中科院分区：
文献类型：
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作者：
J. Deng;W. Hofbauer;N. Chandrasekhar;S. O’Shea
自组装的有机单层纳米孔交叉结作为分子电子学的测试结构。器件产率，这是典型的非常低，由于电短路上的顶部电极沉积，研究了不同的沉积参数，并获得了明显的改善（高达45%的产率）通过间接沉积银电极上冷却基板。然而，产量波动很大，从运行到运行（0.8%至0.45%），这意味着可靠的设备制造仍然具有挑战性。我们发现少数器件（<1%）表现出电导率的切换行为，可能是由于金属丝。
Self-assembled organic monolayer nanopore crossbar junctions were fabricated as a test structure for molecular electronics. The device yield, which is typically very low due to electrical shorting on top electrode deposition, is studied for different deposition parameters, and a clear improvement (up to 45% yield) is obtained by indirect deposition of silver electrodes on cooled substrates. Nevertheless, the yield fluctuates strongly from run to run (∼8% to ∼45%), implying that reliable device fabrication remains challenging. We find a small number of devices (<1%) show switching behaviour in conductivity, presumably due to metal filaments.