Interface engineering via photopolymerization-induced phase separation for flexible UV-responsive phototransistors
Interface engineering via photopolymerization-induced phase separation for flexible UV-responsive phototransistors
复制标题
通过光聚合诱导相分离实现柔性紫外响应光电晶体管的界面工程
DOI:
10.1021/acsami.7b19371
复制
发表时间:
2018
影响因子:
9.5
通讯作者:
Vellaisamy A. L. Roy
中科院分区:
文献类型:
--
作者:
Haiyan Peng;Yan Yan;Yingkui Yang;Li Zhou;Wei Wu;Qijun Sun;Jiaqing Zhuang;Su-Ting Han;Chi-Chiu Ko;Zongxiang Xu;Xiaolin Xie;Robert K. Y. Li;Vellaisamy A. L. Roy
Interface engineering has been recognized to be substantially critical for achieving efficient charge separation, charge carrier transport, and enhanced device performance in emerging optoelectronics. Nevertheless, precise control of the interface structure using current techniques remains a formidable challenge. Herein, we demonstrate a facile and versatile protocol wherein in situ thiol–ene click photopolymerization-induced phase separation is implemented for constructing heterojunction semiconductor interfaces. This approach generates continuous mountainlike heterojunction interfaces that favor efficient exciton dissociation at the interface while providing a continuous conductive area for hole transport above the interface. This facile low-temperature paradigm presents good adaptability to both rigid and flexible substrates, offering high-performance UV-responsive phototransistors with a normalized detectivity up to 6.3 × 1014cm Hz1/2W–1(also called jones). Control experiments based on ex situ photopolymerization and in situ thermal polymerization are also implemented to demonstrate the superiority of this novel paradigm.