Tunable high Q-factor terahertz complementary graphene metamaterial
Tunable high Q-factor terahertz complementary graphene metamaterial
复制标题
可调谐高Q值太赫兹互补石墨烯超材料
DOI：
10.1088/1361-6528/aae0d7
复制
发表时间：
2018
期刊：
影响因子：
3.5
通讯作者：
Shi Wangzhou
中科院分区：
文献类型：
--
作者：
He Xiaoyong;Lin Fangting;Liu Feng;Shi Wangzhou
基于互补石墨烯非对称双栅结构，研究了太赫兹波段大Q值Fano共振的可调谐特性，包括费米能级、结构参数和工作频率的影响.结果表明，与现有的石墨烯可调谐器件相比，Fano谐振曲线非常窄，并且显示出约60的大Q因子。强Fano共振曲线可以方便地定制。随着费米能级的增加，Fano凹陷的幅度减小，共振峰位置向高频移动。费米能级在0.2-1.0 eV范围内变化时，法诺曲线的幅度调制深度（MD）较大，约为90%。随着样品折射率的增加，共振Fano凹陷向低频移动，凹陷幅度MD可达40%以上。研究结果对于理解石墨烯基Fano系统的可调谐机制以及设计高灵敏度的功能器件如传感器、调制器和天线等具有重要意义。
Based on the complementary graphene asymmetric double bars patterns, the tunable Fano resonances with large Q-factors have been investigated in the terahertz regime, including the effects of Fermi levels, structural parameters and operation frequency. The results reveal that compared with existed graphene tunable devices, the Fano resonant curve is very narrow and indicates a large Q-factor of about 60. The strong Fano resonant curves can be convenient tailored. As Fermi level increases, the amplitude of the Fano dip decreases, and the resonant peak position shifts to high frequency. The amplitude modulation depth (MD) of the Fano curve is more, about 90%, if the Fermi level changes in the scope of 0.2–1.0 eV. With the increase of the sample refractive index, the resonant Fano dip shifts low frequency, and the dip amplitude MD can reach more than 40%. The results are very helpful to understand the tunable mechanisms of graphene based Fano systems and to design high sensitivity functional devices, e.g. sensors, modulators, and antenna.