Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode
Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode
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DOI：
10.1063/1.3139012
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发表时间：
2009-05-18
影响因子：
4
通讯作者：
Grein, Christoph
中科院分区：
文献类型：
--
作者：
Banerjee, Koushik;Ghosh, Siddhartha;Grein, Christoph
中波长红外InAs-GaSb应变层超晶格n（+）-n（-）-p雪崩光电二极管，专门设计为具有空穴主导雪崩，具有类似于6.3 μ m的百分之零截止波长的制造和表征。在-3.6 V和77 K下测得的最大倍增增益为105。测得的过量噪声因子显着改善相比，统一的孔电子电离比，并对应于40和50之间的理论值相比，麦金太尔模型。增益随反向偏置沿着变化的指数性质以及低的过量噪声因子证实了单载流子空穴主导的碰撞电离。
Midwavelength infrared InAs-GaSb strained layer superlattice n(+)-n(-)-p avalanche photodiodes, specifically designed to have hole dominated avalanching, with a zero percent cutoff wavelength of similar to 6.3 mu m are fabricated and characterized. Maximum multiplication gain of 105 is measured at -3.6 V at 77 K. Measured excess noise factors are significantly improved compared to unity hole to electron ionization ratio and corresponds to a theoretical value between 40 and 50 when compared with the McIntyre model. Exponential nature of the gain as a function of reverse bias along with low excess noise factors confirms single carrier hole dominated impact ionization.