Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention
Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention
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DOI：
10.1063/1.4767132
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发表时间：
2012-11-19
影响因子：
4
通讯作者：
Uchino, Masatoshi
中科院分区：
文献类型：
--
作者：
Nakajima, Anri;Uchino, Masatoshi
开发了一种在含有 C-60 的有机聚合物层上具有有机聚合物隧道栅极绝缘体的栅极堆叠结构，用作非易失性闪存。对存储器特性的检查揭示了电子和空穴注入 C-60 分子时发生了显着的平带电压偏移。电子注入获得了长的保留时间。在施加偏压后立即在电子保持特性中观察到电荷再分布现象。这种有机聚合物的堆叠结构为开发廉价电子存储器打开了大门。 (C) 2012 年美国物理研究所。 [http://dx.doi.org/10.1063/1.4767132]
A gate stack structure with an organic-polymer tunneling gate insulator on a C-60-containing organic-polymer layer was developed for use as nonvolatile flash memory. Examination of the memory characteristics revealed substantial flatband voltage shifts for both electron and hole injections into C-60 molecules. A long retention time was obtained for electron injection. Charge redistribution phenomena were observed in the electron retention characteristics immediately after the bias application was terminated. This proposed stack structure of organic polymers opens the door to the development of inexpensive electronic memories. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767132]