Transition of the apparent activation energy for the growth of boron films as a function of substrate temperature in plasma-enhanced chemical vapour deposition from B2H6+He
Transition of the apparent activation energy for the growth of boron films as a function of substrate temperature in plasma-enhanced chemical vapour deposition from B2H6+He
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B2H6 He 等离子增强化学气相沉积中硼膜生长表观活化能随基底温度变化的变化
DOI：
10.1088/0022-3727/23/9/017
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
Y. Moriyoshi
中科院分区：
文献类型：
--
作者：
S. Komatsu;Y. Moriyoshi
在低压等离子体增强化学气相沉积硼从B2 H6 +He，生长的表观活化能（Δ E）和膜结构的研究作为一个函数的衬底温度（Ts）的等离子体功率从0.4到1.4千瓦。结果表明，随着Ts的增加，Δ E值由负值（-2.0 ~-8.0 kcal mol ~（-1））向正值（4.2 ~ 20 kcal mol ~（-1））转变。根据由表面基本过程组成的生长模型，Δ E转变归因于从迁移到生长反应的速率限制表面过程的转变;温度依赖的形态变化也支持这一假设。
In a low-pressure plasma-enhanced chemical vapour deposition of boron from B2H6+He, the apparent activation energy for the growth ( Delta E) and the film structure were investigated as a function of substrate temperature (Ts) for plasma powers from 0.4 to 1.4 kW. It was found that Delta E makes a transition from a negative (-2.0 to -8.0 kcal mol-1) to a positive (4.2 to 20 kcal mol-1) value with the increased Ts. According to a growth model consisting of surface elementary processes, the Delta E transition is attributed to a transition of the rate-limiting surface process from migration to growth reaction; a temperature-dependent morphological variation also supports this hypothesis.