Cross-linking behavior and dielectric properties of SiCN precursor
Cross-linking behavior and dielectric properties of SiCN precursor
复制标题
SiCN前驱体的交联行为和介电性能
DOI：
10.1016/j.ceramint.2017.09.086
复制
发表时间：
2017-12-15
影响因子：
5.2
通讯作者：
Gong, Hongyu
中科院分区：
文献类型：
--
作者：
Guo, Xue;Feng, Yurun;Gong, Hongyu
The SiCN precursor was prepared by cross-linking process using polysilazane (PSZ) as raw materials. The cross linking behavior and dielectric properties of SiCN precursor were analyzed. The results indicated that the main reactions during cross-linking process were double bond addition reaction, hydrosilylation reaction, dehydrogenation coupling reaction and transamination reaction. The SiCN precursor was made up of Si-C-N network structure and the main chemical bonds were Si-C, Si-N and C-C. The appropriate cross-linking temperature of SiCN precursor was 600 degrees C. Furthermore, the increasing content and crystallization degree of free carbon could improve the dielectric properties of SiCN precursor.
