Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode
Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode
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面发射自旋极化In0.4Ga0.6As/GaAs量子点发光二极管
DOI：
10.1063/1.1436526
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发表时间：
2002
影响因子：
4
通讯作者：
P. Bhattacharya
中科院分区：
文献类型：
--
作者：
S. Ghosh;P. Bhattacharya
本文报道了自旋极化的In_（0.4）Ga_（0.6）As/GaAs量子点面发光二极管的特性。来自该铁磁层的自旋极化空穴与量子点中的电子复合以产生圆偏振光输出。在5.1K下的峰值光学偏振效率为18%，自旋注入效率估计为36%。自旋注入的温度依赖性与（Ga，Mn）As层中磁化强度的温度依赖性几乎相同。
We report the properties of a spin-polarized In0.4Ga0.6As/GaAs quantum-dot surface-light-emitting diode with a Ga0.974Mn0.026As spin injector layer. Spin-polarized holes from this ferromagnetic layer recombine with electrons in the quantum dots to produce circularly polarized light output. The peak optical polarization efficiency at 5.1 K is 18% and the spin injection efficiency is estimated to be ∼36%. The temperature dependence of spin injection is almost identical to the temperature dependence of magnetization in the (Ga, Mn)As layer.