Flux considerations in the coupling of Monte Carlo plasma sheath simulations with feature evolution models

Flux considerations in the coupling of Monte Carlo plasma sheath simulations with feature evolution models
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蒙特卡罗等离子体鞘层模拟与特征演化模型耦合时的通量考虑因素

DOI:
10.1109/16.129088
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发表时间:
1992
影响因子:
3.1
通讯作者:
S. Hamaguchi
S. Hamaguchi
中科院分区:
工程技术2区
文献类型:
--
作者:
M. Dalvie;R. Farouki;S. Hamaguchi

文献摘要

被引文献

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两个功能,一个2-D沟槽和一个圆形过孔暴露于3-V离子通量的演变进行了计算。表面通量的计算使用粒子分布函数,从蒙特卡罗鞘模拟获得。虽然蒙特卡罗鞘模拟是1-d/2-v(轴对称),衬底表面上的阴影,由于地形打破了轴对称,需要2-d/3-v的表面通量计算。作者提出了一种在长沟槽和圆形通孔中计算磁通量的方法,该方法与2-D/2-V磁通量计算相比只增加很少的计算费用。沟槽和通孔之间的比较表明,正如预期的那样,通孔的几何形状比沟槽阻挡更多的离子轨迹,从而导致通孔中较小的蚀刻速率。如果在2-d/2-v相空间中计算通量,则所得到的特征形状被示出为计算方法的伪影。它还表明,粒子的角分布以及能量通量和由此产生的形状的功能是在很大程度上不敏感的电场分布假设为一个给定的鞘层电压。>
The evolution of two features, a 2-d trench and a circular via exposed to a 3-v ion flux is calculated. The surface flux is calculated using the particle distribution function, obtained from a Monte Carlo sheath simulation. While Monte Carlo sheath simulations are 1-d/2-v (axisymmetric), shadowing on a substrate surface due to topography breaks the axisymmetry and necessitates a 2-d/3-v surface flux calculation. The authors show a methodology for the flux calculation in long trenches and circular vias which adds very little to computational expense over that incurred for a 2-d/2-v flux calculation. Comparison between the trench and the via shows that, as expected, the geometry of a via blocks out more ion trajectories than that of a trench leading to a smaller etch rate in a via. If the flux is calculated in 2-d/2-v phase space, the resulting feature shape is shown to be an artifact of the calculation method. It is also shown that the angular distribution of the particle as well as energy fluxes and the resulting shape of the feature are largely insensitive to the electric field profile assumed for a given sheath voltage. >