Single-crystal field-effect transistors of new Cl2-NDI polymorph processed by sublimation in air
Single-crystal field-effect transistors of new Cl2-NDI polymorph processed by sublimation in air
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DOI：
10.1038/ncomms6954
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发表时间：
2015-01-01
影响因子：
16.6
通讯作者：
Wuerthner, Frank
中科院分区：
文献类型：
--
作者：
He, Tao;Stolte, Matthias;Wuerthner, Frank
由小分子构建的活性材料的物理性质由它们在固态中的分子堆积决定。在这里，我们展示了第一次的n沟道单晶场效应晶体管和有机薄膜晶体管的升华2，6-二氯萘二酰亚胺在空气中的生长。在这些条件下，一个新的多晶型与二维砖墙包装模式（β-相），得到区别于以前报道的人字形包装图案从溶液（α-相）。我们能够在正十八烷基三乙氧基硅烷改性的衬底上制造出在空气中电子迁移率高达8.6 cm（2）V-1 s（-1）（α相）和高达3.5 cm（2）V-1 s（-1）（β相）的单晶场效应晶体管。在二氧化硅上，可以在空气中制造基于β相的薄膜器件，从而产生0.37 cm（2）V-1 s（-1）的电子迁移率。在环境条件下通过升华的简单晶体和薄膜生长过程避免了复杂的衬底修改和昂贵的基于真空设备的制造步骤。
Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-film transistors by sublimation of 2,6-dichloro-naphthalene diimide in air. Under these conditions, a new polymorph with two-dimensional brick-wall packing mode (beta-phase) is obtained that is distinguished from the previously reported herringbone packing motif obtained from solution (alpha-phase). We are able to fabricate single-crystal field-effect transistors with electron mobilities in air of up to 8.6 cm(2) V-1 s(-1) (alpha-phase) and up to 3.5 cm(2) V-1 s(-1) (beta-phase) on n-octadecyltriethoxysilane-modified substrates. On silicon dioxide, thin-film devices based on beta-phase can be manufactured in air giving rise to electron mobilities of 0.37 cm(2) V-1 s(-1). The simple crystal and thin-film growth procedures by sublimation under ambient conditions avoid elaborate substrate modifications and costly vacuum equipment-based fabrication steps.