Alloy-Free Band Gap Tuning across the Visible Spectrum
Alloy-Free Band Gap Tuning across the Visible Spectrum
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DOI：
10.1103/physrevlett.122.256403
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发表时间：
2019-06-27
影响因子：
8.6
通讯作者：
Reeves, Roger J.
中科院分区：
文献类型：
--
作者：
Makin, Robert A.;York, Krystal;Reeves, Roger J.
我们目前的证据，从理论和实验，ZnSnN 2和MgSnN 2可以用来匹配InGaN的带隙，而无需合金化-通过利用阳离子无序在一个受控的方式。我们的基础上确定的S，长程有序参数的阳离子亚晶格，一系列的外延薄膜的ZnSnN 2和MgSnN 2使用三种不同的技术：X-射线衍射，拉曼光谱，和原位电子衍射。我们观察到S-2与ZnSnN 2（1.12-1.98 eV）和MgSnN 2（1.87-3.43 eV）的光学带隙之间存在线性关系。结果清楚地表明控制杂价阳离子有序和光学带隙之间的相关性，这适用于一个广泛的新兴三元杂价化合物组，并具有类似的趋势，在其他材料的性质，除了带隙的影响。
We present evidence, from theory and experiment, that ZnSnN2 and MgSnN2 can be used to match the band gap of InGaN without alloying-by exploiting cation disorder in a controlled fashion. We base this on the determination of S, the long-range order parameter of the cation sublattice, for a series of epitaxial thin films of ZnSnN2 and MgSnN2 using three different techniques: x-ray diffraction, Raman spectroscopy, and in situ electron diffraction. We observe a linear relationship between S-2 and the optical band gap of both ZnSnN2 (1.12-1.98 eV) and MgSnN2 (1.87-3.43 eV). The results clearly demonstrate the correlation between controlled heterovalent cation ordering and the optical band gap, which applies to a broad group of emerging ternary heterovalent compounds and has implications for similar trends in other material properties besides the band gap.