Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF); synthesis, conductivities and crystal structures of their TCNQ complexes

Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF); synthesis, conductivities and crystal structures of their TCNQ complexes
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含有富瓦烯型电子给体的新型碲,三硒代碲富瓦烯(TSTeF)和二硒代碲富瓦烯(DSDTeF);

DOI:
10.1039/b104402h
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发表时间:
2001
影响因子:
--
通讯作者:
T. Otsubo
T. Otsubo
中科院分区:
--
文献类型:
--
作者:
A. Morikami;K. Takimiya;Y. Aso;T. Otsubo

文献摘要

被引文献

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通过高效的两阶段或三阶段程序合成了新型含碲富瓦烯型电子给体三硒代碲富瓦烯 (TSTeF) 和二硒代碲富瓦烯 (DSDTeF)。它们作为优异的电子供体,与 TCNQ 形成高导电性的电荷转移 (CT) 复合物。 TSTeF–TCNQ 在室温下表现出 2000 S cm−1 的高电导率,并且在低至 85 K 时呈金属性,此时会发生金属-绝缘体 (MI) 转变。相比之下,DSDTeF-TCNQ 的电导率在室温下为 1400 S cm−1,并且单调增加至 4.2 K,而没有任何 MI 转变。 X射线结构分析表明,TSTeF-TCNQ在晶体学上与TTF-TCNQ具有同构结构,包括典型的一维供体和受体柱。另一方面,DSDTeF-TCNQ 的晶体结构被表征 通过准一维供体堆叠通过 Te-Se 接触实现并排柱间相互作用,从而在低温下稳定金属态。
Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF) are synthesized by an efficient two- or three-stage procedure. They behave as superior electron donors to give highly conductive charge-transfer (CT) complexes with TCNQ. TSTeF–TCNQ shows a high conductivity of 2000 S cm−1 at room temperature and is metallic down to 85 K, where a metal–insulator (MI) transition takes place. In contrast, the conductivity of DSDTeF–TCNQ is 1400 S cm−1 at room temperature and monotonously increases down to 4.2 K without any MI transition. An X-ray structural analysis shows that TSTeF–TCNQ is crystallographically isostructural with TTF–TCNQ comprising typical one-dimensional donor and acceptor columns. On the other hand, the crystal structure of DSDTeF–TCNQ is characterized by quasi one-dimensional donor stacks with side-by-side intercolumnar interactions through Te–Se contacts, which stabilize the metallic state at low temperature.