Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
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DOI：
10.1103/physrevapplied.16.054040
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发表时间：
2021-11
影响因子：
4.6
通讯作者：
M. Monavarian;Jiaming Xu;Michel Khoury;Feng Wu;P. de Mierry;P. Vennégués;M. Belkin;J. Speck
中科院分区：
文献类型：
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作者：
M. Monavarian;Jiaming Xu;Michel Khoury;Feng Wu;P. de Mierry;P. Vennégués;M. Belkin;J. Speck
本文报道了氨分子束外延（MBE）生长异质结构中结构缺陷对其中红外亚带间（ISB）性能的影响。在共载平面悬空衬底和异质外延平面蓝宝石模板（a-/r-sap）上生长了三种不同量子阱宽度（3.0,3.3和3.7 nm）的二十周期多量子阱（MQW）异质结构。在无基面层错（BSF）、柱面层错（PSF）和部分位错（PD）的独立平面上生长的共负载结构，其螺纹位错（TD）密度约为约，与在蓝宝石模板上生长的共负载结构进行了比较，其中BSF、PSF、PD和TD密度分别约为4 ×to、5 ×to 2 ×、9 ×to 2 ×和约。傅里叶变换红外吸收光谱结果表明，不同QW宽度的mqw的ISB跃迁能在250 ~ 300 meV（波长范围4.1 ~ 4.8µm）之间。ISB吸收光谱表明，与在独立衬底上生长的结构相比，在-r-蓝宝石模板上生长的结构的过渡能约小5%，谱线宽度仅约大10%-20%。非极平面ISB结构的强缺陷容错性可能是由于缺陷的性质及其相对于导带最小值的能级，这不会影响ISB的性能。我们的研究结果为生产低成本可扩展的非极性iii -氮化物MQW异质结构铺平了道路，该异质结构可用于各种基于子带间跃迁的被动和主动光学材料和器件。
We report on the impact of structural defects on mid-infrared intersubband (ISB) properties ofheterostructures grown by ammonia molecular beam epitaxy (MBE). Twenty-periodmulti-quantum-well (MQW) heterostructures are grown on co-loadeda-plane freestandingsubstrates and heteroepitaxiala-planeonr-plane sapphire templates (a-/r-sap) for three different quantum-well (QW) widths (3.0, 3.3, and 3.7 nm). Co-loaded structures grown on freestandinga-plane with no basal-plane stacking faults (BSFs), prismatic stacking faults (PSFs), and partial dislocations (PDs), with low threading dislocation (TD) densities of aboutare compared with those grown ona-templates onr-sapphire with BSF, PSF, PD, and TD densities of about 4 ×to, 5 ×to 2 ×, about 9 ×to 2 ×, and about, respectively. Fourier-transform infrared absorption spectroscopy indicates ISB transition energies in the range of about 250–300 meV (wavelength range 4.1–4.8µm) for MQWs with different QW widths. The ISB absorption spectra indicate about 5% smaller transition energies and only about 10%–20% larger spectral linewidths for structures grown ona-r-sapphire templates compared with those on freestandingsubstrates. The strong defect tolerance in the nonpolara-plane ISB structures could be due to the nature of defects and their energy levels with respect to the conduction-band minima, which do not affect the ISB properties. Our results pave the way toward the production of low-cost scalable nonpolar III-nitride MQW heterostructures for a variety of passive and active optical materials and devices based on intersubband transitions.