Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs
Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs
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DOI：
10.1109/led.2013.2296659
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发表时间：
2014-03-01
影响因子：
4.9
通讯作者：
Rajan, Siddharth
中科院分区：
文献类型：
--
作者：
Hung, Ting-Hsiang;Park, Pil Sung;Rajan, Siddharth
我们展示了一种有效的方法来工程的电介质/AlGaN正界面固定电荷的氧等离子体和后金属化退火。观察到界面固定电荷从2 × 10（13）cm（-2）到8 × 10（12）cm（-2）的显著抑制。实验和理论的电子迁移率特性和远程杂质散射的影响进行了研究。氧化物/半导体界面电荷密度的降低导致电子迁移率的增加，并且能够实现正阈值电压。
We demonstrate an efficient approach to engineer the dielectric/AlGaN positive interface fixed charges by oxygen plasma and post-metallization anneal. Significant suppression of interface fixed charges from 2 x 10(13) to 8 x 10(12) cm(-2) was observed. Experimental and theoretical electron mobility characteristics and the impact of remote impurity scattering were investigated. The reduction in oxide/semiconductor interface charge density leads to an increase of electron mobility, and enables a positive threshold voltage.