Interface induced uniaxial magnetic anisotropy in amorphous CoFeB films on AlGaAs(001).
Interface induced uniaxial magnetic anisotropy in amorphous CoFeB films on AlGaAs(001).
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DOI：
10.1103/physrevlett.100.117201
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发表时间：
2008-03
影响因子：
8.6
通讯作者：
A. Hindmarch;C. Kinane;M. Mackenzie;J. Chapman;M. Henini;D. Taylor;D. Arena;J. Dvorak;B. Hickey-B
中科院分区：
文献类型：
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作者：
A. Hindmarch;C. Kinane;M. Mackenzie;J. Chapman;M. Henini;D. Taylor;D. Arena;J. Dvorak;B. Hickey-B
我们证明了（Al）GaAs（001）上的非晶CoFeB薄膜中存在孤立的磁界面各向异性，类似于外延薄膜中的各向异性，但没有磁晶各向异性项。易轴的方向对应于由于提出的外延膜的界面相互作用。我们表明，各向异性是由原子磁矩的相对轨道分量。电荷转移被排除的接口各向异性的起源，它被假定为在半导体中的自旋轨道相互作用是至关重要的，在确定的磁各向异性。
We demonstrate an isolated magnetic interface anisotropy in amorphous CoFeB films on (Al)GaAs(001), similar to that in epitaxial films but without a magnetocrystalline anisotropy term. The direction of the easy axis corresponds to that due to the interfacial interaction proposed for epitaxial films. We show that the anisotropy is determined by the relative orbital component of the atomic magnetic moments. Charge transfer is ruled out as the origin of the interface anisotropy, and it is postulated that the spin-orbit interaction in the semiconductor is crucial in determining the magnetic anisotropy.