Fluorine-Assisted Low-Temperature Synthesis of GaN:ZnO-Related Solid Solutions with Visible-Light Photoresponse
Fluorine-Assisted Low-Temperature Synthesis of GaN:ZnO-Related Solid Solutions with Visible-Light Photoresponse
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氟辅助低温合成具有可见光响应的 GaN:ZnO 相关固溶体
DOI：
10.1021/acsami.2c03435
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发表时间：
2022
影响因子：
9.5
通讯作者：
Kazuhiko Maeda
中科院分区：
文献类型：
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作者：
Akinobu Miyoshi;Shuhei Yasuda;Tomoki Kanazawa;Rie Haruki;Keiichi Yanagisawa;Ya Tang;Ryusuke Mizuochi;Toshiyuki Yokoi;Shunsuke Nozawa;Koji Kimoto;Kazuhiko Maeda
采用含ga氧化物和ZnF2的混合物氮化法制备了纤锌矿结构的Ga1-xZnx （N，O，F）。znf2的加入使合成Ga1-xZnx （N，O，F）的氮化温度降低到823 K，即使使用znga2o4作为配对前驱体。合成温度的降低是由于氟的加入增强了氮化作用。与传统高温氨解反应合成GaN:ZnO固溶体相比，氟的低温氮化抑制了Zn的挥发。氟辅助氮化制备的Ga1-xZnx （N，O，F）中Zn浓度较高，N浓度较高，与常规氨解反应合成的GaN:ZnO相比，Ga1-xZnx （N，O，F）的吸收边红移至560 nm。Ga1-xZnx （N，O，F）的可见光吸收可以用来驱动水的光电氧化。
Wurtzite-structured Ga1–xZnx(N,O,F) was successfully synthesized by nitridation of mixtures of a Ga-containing oxide and ZnF2. The addition of ZnF2lowered the nitridation temperature for the synthesis of Ga1–xZnx(N,O,F) to 823 K, even when bulk ZnGa2O4was used as a paired precursor. This lowering of the synthesis temperature was ascribed to the enhancement of nitridation through the addition of fluorine. The low-temperature nitridation achieved by the addition of fluorine suppressed the volatilization of Zn compared with that during the synthesis of a GaN:ZnO solid solution by a conventional high-temperature ammonolysis reaction. The higher concentration of Zn, as well as the higher N concentration in Ga1–xZnx(N,O,F) achieved through the fluorine-assisted nitridation, led to a redshift of the absorption edge of Ga1–xZnx(N,O,F) to 560 nm compared with that of GaN:ZnO synthesized by the conventional ammonolysis reaction. The visible-light absorption of Ga1–xZnx(N,O,F) can be used to drive the photoelectrochemical oxidation of water.