Growth kinetics of Si-molecular beam epitaxy
Growth kinetics of Si-molecular beam epitaxy
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硅分子束外延生长动力学
DOI：
10.1007/bf00617144
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
E. Kasper
中科院分区：
文献类型：
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作者：
E. Kasper
观察了硅分子束外延薄膜的生长模式、表面形貌、晶体完整性和生长速率随温度（450°-950 ° C）、硅通量密度（8×1014 - 8× 1015 cm 2/s）和表面取向（111，110，100）的变化。在变化的参数内，生长通过二维生长模式经由源自商业上可获得的衬底的轻微取向差（通常为0.25°）的原子台阶的横向运动进行。这种生长方式可以得到具有高晶格完整性和光滑表面的单晶薄膜。的生长速率-线性依赖于硅通量密度和独立的温度和取向-表明凝聚系数接近统一。基于Burton-Cabrera-Frank理论的原子阶跃流动模型解释了具有低扩散活化能的移动的吸附原子的这种行为。
Growth mode, surface morphology, crystal perfection and growth rate of siliconmolecular beam epitaxy films were observed as function of temperature (450°–950°C), silicon flux density (8×1014−8×1015cm2/s) and surface orientation (111, 110, 100). Within the varied parameters growth proceeds by the two-dimensional growth mode via the lateral motion of atomic steps originating from the slight misorientation of commercially available substrates (typically 0.25°). Single crystalline films with high lattice perfection and smooth surfaces result from this growth mode. The growth rate — linearly dependent on Si-flux density and independant of temperature and orientation — indicates a condensation coefficient near unity. An atomic step flow model on the basis of the Burton-Cabrera-Frank theory explains this behaviour by mobile adatoms with low activation energy of diffusion.