Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene

Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene
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DOI:
10.1063/1.4818329
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发表时间:
2013-08-05
影响因子:
4
通讯作者:
Koh, Shinji
Koh, Shinji
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Mulyana, Yana;Horita, Masahiro;Koh, Shinji

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研究了双层石墨烯基场效应晶体管(G-FET)经紫外线(UV)/臭氧(O-3)氧化处理后电学性质的变化。氧化后,电导率和载流子迁移率均有所下降。然而,H-2/Ar氧化处理后的G-FET的电学性能恢复,表明UV/O-3处理的氧化是热可逆的。用拉曼光谱验证了氧化后没有引入缺陷。X射线光电子能谱证实了氧与石墨烯之间存在化学键。此外,我们还发现氧化后石墨烯的方块电阻增加。然而,石墨烯-Au/TiN电极界面的接触电阻率保持不变。(C)2013 AIP出版有限责任公司。
Changes in electrical properties of a bilayer graphene-based field-effect transistor (G-FET) after being oxidized through ultraviolet (UV)/ozone (O-3) treatment are presented. A decrease in conductivity and carrier mobility was observed after oxidation. However, electrical properties recovered after annealing oxidized G-FET with H-2/Ar, indicating that oxidation with UV/O-3 treatment was thermally reversible. Raman spectroscopy was conducted to verify that no defects were introduced after oxidation. The existence of chemical bonds between oxygen and graphene was confirmed from the X-ray photoelectron spectroscopy. Moreover, we found that graphene's sheet resistance increased after oxidation. Nevertheless, contact resistivity at graphene-Au/TiN electrode interface remained unchanged. (C) 2013 AIP Publishing LLC.