Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays
Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays
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DOI：
10.1063/1.2339044
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发表时间：
2006-09
影响因子：
4
通讯作者：
L. Courtade;C. Muller;G. Andreoli;C. Turquat;L. Goux;D. Wouters
中科院分区：
文献类型：
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作者：
L. Courtade;C. Muller;G. Andreoli;C. Turquat;L. Goux;D. Wouters
分析了X射线辐照与偏置电压或双极电循环对用于高可靠铁电随机存储器的三维铁电电容阵列的影响。使用能够进行现场测量的专用实验装置，在几个小时的暴露时间内遵循开关动力学。在考虑光生电荷俘获与铁电畴结构之间的相互作用时，解释了极化变化和电压漂移，这种相互作用依赖于电容器几何形状和外场。在处于“写入”或“写入”状态的类存储器阵列中，高剂量的X射线加速了可能扰乱正常存储器操作的类疲劳(极化降低)和/或类印记(电压漂移)机制。
Effects of x-ray irradiation combined with either bias voltage or bipolar electrical cycling were analyzed on three-dimensional ferroelectric capacitor arrays developed for highly reliable ferroelectric random access memories. Using dedicated experimental setup enabling in situ measurements, switching kinetics were followed over several hours of exposure. Polarization changes and voltage shifts were interpreted in considering interactions between trapping of photoinduced charges and ferroelectric domain structure, which depends upon the capacitor geometry and external field. In memorylike arrays in “written” or “writing” states, high dose of x rays accelerates fatiguelike (polarization reduction) and/or imprintlike (voltage shift) mechanisms that may perturb normal memory operations.