Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution
Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution
复制标题
GaAs(001) 表面的氮化：(3×3) 重建的热行为及其演化
DOI：
10.1116/1.590806
复制
发表时间：
1999
影响因子：
1.4
通讯作者：
J. E. MacDonald
中科院分区：
文献类型：
--
作者：
J. Lu;L. Haworth;P. Hill;D. Westwood;J. E. MacDonald
在分子束外延生长室中，用射频氮原子等离子体源对GaAs（001）表面进行了氮化研究。用原位反射高能电子衍射和X射线光电子能谱（XPS）研究了氮诱导的GaAs（001）（3×3）重构。发现这种重建仅在400-580 °C的温度范围内用非常低剂量的原子氮获得。 通过定量XPS测定对应于（3×3）重构的氮覆盖度为0.30±0.09 ML。在400 °C以下，在GaAs（001）表面发现了无序结构的As-N物种。 随后在约500 °C下退火产生（3×3）重构。 在580 °C以上，氮化导致直接形成β-GaN岛。 此外，（3×3）重构被发现是不稳定的暴露于原子氢和退火。（3×3）的脱附活化能为2.75± 0.55eV。由此导出了（3×3）的表面相图。
The nitridation of the GaAs(001) surface using a radio frequency atomic nitrogen plasma source in a molecular beam epitaxy growth chamber has been studied. The resulting nitrogen induced GaAs(001) (3×3) reconstruction was investigated by in situ reflection high energy electron diffraction and x-ray photoemission spectroscopy (XPS). It was found that this reconstruction is only obtained in the temperature range 400–580 °C with a very low dose of atomic nitrogen. The nitrogen coverage corresponding to the (3×3) reconstruction was determined by quantitative XPS to be 0.30±0.09 ML. Below 400 °C an As–N species of disordered structure was found on the GaAs(001) surface. Subsequent annealing at about 500 °C produced the (3×3) reconstruction. Above 580 °C, nitridation lead to direct formation of β-GaN islands. In addition, the (3×3) reconstruction was found to be unstable to both exposure to atomic hydrogen and annealing. The N desorption activation energy of the (3×3) was estimated to be 2.75±0.55 eV. A surface phase diagram of the (3×3) has thus been deduced.