Stable high-power operation of self-aligned stepped substrate (S3) AlGaInP visible laser diode with small beam aspect ratio
Stable high-power operation of self-aligned stepped substrate (S3) AlGaInP visible laser diode with small beam aspect ratio
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小光束纵横比自对准阶梯衬底（S3）AlGaInP可见激光二极管稳定高功率运行
DOI：
10.1049/el:19940264
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发表时间：
1994
影响因子：
1.1
通讯作者：
T. Tanahashi
中科院分区：
文献类型：
--
作者：
A. Furaya;T. Fukushima;Y. Kito;C. Anayama;M. Sugano;H. Sudo;M. Kondô;T. Tanahashi
研制了一种自对准阶梯衬底（S3）AlGaInP激光二极管，具有小光束纵横比和稳定的高温高功率输出。该激光器具有折射率引导的激光器结构，并且仅通过一步MOVPE制备。减小了激光波导的宽度以增大光束在水平方向上的发散角。此外，应变多量子阱有源层进行了修改，以减少高温工作电流，通过引入GaInAsP阱层。结果，激光器的光束纵横比为1.5，并且在50°C下稳定运行35 mW超过1000 h。
The authors have developed a selfaligned stepped substrate (S3) AlGaInP laser diode with a small beam aspect ratio and stable high-temperature high-output-power operation. The laser had the index-guided laser structure, and was fabricated by only one-step MOVPE. The width of the laser waveguide was decreased to enlarge the beam divergence in the horizontal direction. Also, the strained multiquantum-well active layer was modified to reduce the high temperature operation current by introducing GaInAsP well layers. As a result, the laser had a beam aspect ratio of 1.5 and stable 35 mW operation for more than 1000 h at 50°C.