Martensitic phase transformation of TiNi thin films fabricated by co-sputtering deposition
Martensitic phase transformation of TiNi thin films fabricated by co-sputtering deposition
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DOI：
10.1016/j.jallcom.2013.05.092
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发表时间：
2013-12
影响因子：
6.2
通讯作者：
Seong-Woong Kim;Y. Jeon;C. Park;J. Kim;Dong-Ho Kim;J. Yeom
中科院分区：
文献类型：
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作者：
Seong-Woong Kim;Y. Jeon;C. Park;J. Kim;Dong-Ho Kim;J. Yeom
对用共溅射方法制备的TiNi薄膜进行了评价。采用先进的多靶溅射系统沉积了TiNi薄膜。用带钛片的夹心薄膜在700℃热处理1、10和100h，测量了薄膜的相变温度。相变温度和显微组织分析表明，700℃10h的热处理工艺是制备Ti-50.6Ni薄膜的理想工艺条件。
TiNi thin films deposited using co-sputtering method are evaluated. Advanced multi-target sputtering system was used to deposit the TiNi thin films. The films were heat-treated at 700 °C for 1, 10 and 100 h by sandwich thin film with a Ti plate and the transformation temperature was measured. The transformation temperature and microstructure indicate that 10 h annealing at 700 °C will be the ideal condition for Ti–50.6Ni thin films.