About the Cu-related green luminescence band in ZnO
About the Cu-related green luminescence band in ZnO
复制标题
DOI：
10.1116/1.3110023
复制
发表时间：
2009-05
影响因子：
1.4
通讯作者：
M. Reshchikov;V. Avrutin;N. Izyumskaya;R. Shimada;H. Morkoç;S. Novak
中科院分区：
文献类型：
--
作者：
M. Reshchikov;V. Avrutin;N. Izyumskaya;R. Shimada;H. Morkoç;S. Novak
用带隙上激发法研究了蓝宝石衬底上分子束外延生长的n型ZnO层和水热法生长的ZnO体样品中与Cu相关的绿色发光（GL）带。样品在空气中在高于600°C的温度下退火导致CuZn受体浓度的增加，随后是峰值在2.45eV处的Cu相关GL带的显著增强和特征精细结构。GL带在250和500 K之间的温度淬火，由于从CuZn受体的激发态的空穴逃逸到价带。该态在ZnO带隙中的能量位置和空穴俘获截面分别估计为0.38eV和2×10− 13cm 2。
Cu-related green luminescence (GL) band in n-type ZnO layers grown by molecular beam epitaxy on sapphire and a bulk ZnO sample grown by hydrothermal method have been studied with above-bandgap excitation. Annealing of the samples in air at temperatures above 600°C resulted in an increase in the concentration of CuZn acceptors, followed by a dramatic enhancement of the Cu-related GL band peaking at 2.45eV, and a characteristic fine structure. The GL band quenched at temperatures between 250 and 500K due to escape of holes from the excited state of the CuZn acceptor to the valence band. Energy position of this state in the bandgap of ZnO and its capture cross section for holes were estimated as 0.38eV and 2×10−13cm2, respectively.