Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn
Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn
复制标题
高锡含量 GeSn 分子束外延过程中薄膜自发转变为高结晶质量条带
DOI：
10.1038/s41598-020-63152-y
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发表时间：
2020
影响因子：
4.6
通讯作者：
Qiming Wang
中科院分区：
文献类型：
--
作者：
Nan Wang;Chunlai Xue;Fengshuo Wan;Yue Zhao;Guoyin Xu;Zhi Liu;Jun Zheng;Yuhua Zuo;Buwen Cheng;Qiming Wang
采用分子束外延（MBE）技术在Ge缓冲层Si衬底上生长了两个系列的Ge_（0.8）Sn_（0.2）样品，研究了生长温度和薄膜厚度对表面形貌演化的影响。发现Ge_（0.8）Sn_（0.2）薄膜的偏析和弛豫是由于薄膜上Ge_（0.8）Sn_（0.2）条纹的形成。在特定的生长条件下，条纹几乎可以覆盖整个表面。XRD、TEM、AFM、PL和TEM分析结果表明，所制备的条带为高质量的GeSn单晶，Sn含量约为5%。GeSn条纹的形成为在Si上制备高结晶质量的GeSn条纹提供了一种有效的策略，其中Ge0.8Sn0.2薄膜作为前驱体，偏析的Sn作为催化剂液滴。这种技术在未来的光电和微电子应用中具有巨大的潜力。
Two series of Ge0.8Sn0.2samples were grown on Ge buffered Si substrate by molecular beam epitaxy (MBE) to investigate the influence of growth temperature and film thickness towards the evolution of surface morphology. A novel phenomena was observed that the Ge0.8Sn0.2film was segregated and relaxed by the formation of GeSn stripes on the film. Under specific growth condition, the stripes can cover nearly the whole surface. XRD, TEM, AFM, PL and TEM results indicated that the stripes are high quality single crystalline GeSn with Sn content around 5%. The formation of GeSn stripes proposes an effective strategy to fabricate high crystalline quality GeSn stripe on Si, where the Ge0.8Sn0.2film serves as precursor and the segregated Sn works as catalyst droplets. This technique has great potential for future optoelectronic and microelectronic applications.