Ultra-narrow WS2 nanoribbons encapsulated in carbon nanotubes
Ultra-narrow WS2 nanoribbons encapsulated in carbon nanotubes
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封装在碳纳米管中的超窄 WS2 纳米带
DOI：
10.1039/c0jm02821e
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发表时间：
2011-01-01
影响因子：
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通讯作者：
Iijima, Sumio
中科院分区：
文献类型：
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作者：
Wang, Zhiyong;Zhao, Keke;Iijima, Sumio
层状二硫化钨纳米结构具有重要的基础和技术意义。目前合成的WS 2带的宽度在微米级。通过使用单壁碳纳米管和双壁碳纳米管作为模板，我们制作的WS 2纳米带具有光滑的锯齿形边缘和均匀的宽度下降到1-3 nm和层数下降到1-3，取决于纳米管的直径。虽然体WS 2是一种半导体，超窄的独立的扶手椅边缘WS 2纳米带变成磁性或磁性金属根据我们的第一性原理计算的边缘钝化的方式，而超窄扶手椅边缘WS 2纳米带仍然是一个狭窄的间隙的半导体。
Layered tungsten disulfide nanostructures are of both fundamental and technological interest. The widths of currently synthesized WS2 ribbons are in the microscale. By using single-walled carbon nanotubes and double-walled carbon nanotubes as templates, we fabricate WS2 nanoribbons with smooth zigzag edges and uniform widths down to 1–3 nm and layer numbers down to 1–3, dependent on the nanotube diameter. Although bulk WS2 is a nonmagnetic semiconductor, the ultra-narrow free-standing zigzag-edged WS2 nanoribbons turn out to be magnetic or nonmagnetic metals depending on the edge passivation way according to our first-principles calculations, whereas the ultra-narrow armchair-edged WS2 nanoribbons remain nonmagnetic semiconductors with a narrow gap.