Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors
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DOI：
10.1063/1.5018151
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发表时间：
2018-04-02
影响因子：
4
通讯作者：
Svintsov, D.
中科院分区：
文献类型：
--
作者：
Bandurin, D. A.;Gayduchenko, I.;Svintsov, D.
由于其卓越的电子迁移率，石墨烯被认为是太赫兹（THz）范围内高频辐射探测器的有前途的平台。此前，研究表明，由于热电和/或等离子体波整流，石墨烯场效应晶体管（FET）对入射的太赫兹辐射表现出室温宽带光响应。这两种效应都表现出类似的对栅极电压的功能依赖性，因此，在之前的研究中很难理清这些影响。在这封信中，我们报告了在不同温度下分析的石墨烯场效应晶体管亚太赫兹响应的综合实验和理论研究。这项与温度相关的研究使我们能够揭示光热电效应、p-n 结整流和等离子体整流在石墨烯 FET 亚太赫兹光响应中的作用。由 AIP 出版社出版。
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. Published by AIP Publishing.