Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit
Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit
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DOI：
10.1073/pnas.1613643113
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发表时间：
2016-11-15
影响因子：
11.1
通讯作者：
Grundmann, Marius
中科院分区：
文献类型：
--
作者：
Yang, Chang;Kneiss, Max;Grundmann, Marius
在富碘生长条件下，实现了碘化亚铜 (CuI) 薄膜的简并 p 型传导，从而实现了创纪录的高室温电导率，沉积 CuI 约为 156 S/cm，I 掺杂 CuI 约为 283 S/cm。同时，薄膜显得清晰，在可见光谱范围内表现出 60-85% 的高透射率。同时实现如此高的电导率和透明度提高了 p 型 TC 的品质因数：其值从大约 200 跃升至大约 17,000 M Omega(-1)。通过反应溅射在室温下沉积多晶 CuI 薄膜。相对于其他 p 型透明导体，检查了它们的电学和光学特性。通过温度相关的电导率测量研究了 CuI 薄膜的输运特性，该测量揭示了半导体-金属转变取决于溅射气体中的碘/氩比率。
A degenerate p-type conduction of cuprous iodide (CuI) thin films is achieved at the iodine-rich growth condition, allowing for the record high room-temperature conductivity of similar to 156 S/cm for asdeposited CuI and similar to 283 S/cm for I-doped CuI. At the same time, the films appear clear and exhibit a high transmission of 60-85% in the visible spectral range. The realization of such simultaneously high conductivity and transparency boosts the figure of merit of a p-type TC: its value jumps from similar to 200 to similar to 17,000 M Omega(-1). Polycrystal-line CuI thin films were deposited at room temperature by reactive sputtering. Their electrical and optical properties are examined relative to other p-type transparent conductors. The transport properties of CuI thin films were investigated by temperature-dependent conductivity measurements, which reveal a semiconductor-metal transition depending on the iodine/argon ratio in the sputtering gas.