High-Sensitivity Temperature Measurement With Miniaturized InSb Mid-IR Sensor
High-Sensitivity Temperature Measurement With Miniaturized InSb Mid-IR Sensor
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DOI：
10.1109/jsen.2007.902948
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发表时间：
2007-07
影响因子：
4.3
通讯作者：
E. Camargo;K. Ueno;Tomohiro Morishita;M. Sato;H. Endo;M. Kurihara;K. Ishibashi;Naohiro Kuze
中科院分区：
文献类型：
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作者：
E. Camargo;K. Ueno;Tomohiro Morishita;M. Sato;H. Endo;M. Kurihara;K. Ishibashi;Naohiro Kuze
报道了一种室温工作的InSb光伏红外传感器(InSb PVS)的研制和评价。InSb PVS由700个InSb p+-p-n+光电二极管串联而成，生长在半绝缘的GaAs(100)衬底上。在p+和p-层之间使用了Al0.17rIn0.83Sb势垒层，以减少光激电子的扩散。截止波长为6.8微米，输出信号接近线性，辐照度高达0.6 mW/cm2。该传感器在室温下的灵敏度为67 mV/K，噪声当量温差为2.2mK/Hz1/2，适合于非接触式测温。
This paper reports the development and evaluation of an InSb photovoltaic infrared sensor (InSb PVS) operating at room temperature. The InSb PVS consists of 700 InSb p+ - p- - n+ photodiodes connected in series, on a semi-insulating GaAs (100) substrate. An Al0.17rIn0.83Sb barrier layer between p+ and p- layers was used to reduce diffusion of photo-excited electrons. Cutoff wavelength was 6.8 mum and output signal was almost linear with irradiance up to 0.6 mW/cm2. Sensitivity of 67 muV/K and noise equivalent temperature difference of 2.2 mK/Hz1/2 was obtained at room temperature, which shows the sensor to be a suitable for noncontact thermometry.