Characterization of RuO2 and IrO2 films deposited on Si substrate
Characterization of RuO2 and IrO2 films deposited on Si substrate
复制标题
Si 衬底上沉积的 RuO2 和 IrO2 薄膜的表征
DOI：
10.1016/s0925-8388(00)01403-1
复制
发表时间：
2001
影响因子：
6.2
通讯作者：
K. Tiong
中科院分区：
文献类型：
--
作者：
P. Liao;Ying;K. Tiong
RuO2and IrO2films, deposited on Si substrates by metal–organic chemical vapor deposition (MOCVD) method and reactive sputtering method under various conditions, were characterized by atomic force microscopy (AFM), X-ray diffraction, electrical conductivity, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The red shift and broadening of the line width of the Raman peaks were analyzed and discussed.
